november 2012 fdm3622 n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation fdm3622 rev.c2 www.fairchildsemi.com 1 fdm3622 n-channel powertrench ? mosfet 100v, 4.4a, 60m features ? max r ds(on) = 60m at v gs = 10v, i d = 4.4a ? max r ds(on) = 80m at v gs = 6.0v, i d = 3.8a ? low miller charge ? low qrr body diode ? optimized efficiency at high frequencies ? uis capability (single pulse and repetitive pulse) ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor's advanced powertrench ? process that has been especially tailored to minimi ze the on-state resistance and yet maintain low gate charge for superior switching performance. applications ? distributed power architectures and vrms. ? primary switch for 24v and 48v systems ? high voltage synchronous rectifier ? formerly developmental type 82744 mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous (note 1a) 4.4 a -pulsed 20 p d power dissipation (note 1a) 2.1 w power dissipation (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 3.0 c/w r ja thermal resistance, junction to ambient (note 1a) 60 device marking device package reel size tape width quantity bottom d d d d s s s g top pin 1 mlp 3.3x3.3 s s s g d d d d fdm3622 fdm3622 mlp 3.3x3.3 13 ?? 12 mm 3000 units
fdm3622 n-channel powertrench ? mosfet fdm3622 rev.c2 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 100 v i dss zero gate voltage drain current v ds = 80v, v gs = 0v 1 p a t j = 100 c 250 i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2 4 v r ds(on) static drain to source on resistance v gs = 10v, i d = 4.4a 44 60 m : v gs = 6.0v, i d = 3.8a 56 80 v gs = 10v, i d = 4.4a , t j = 150 c 92 120 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz 820 1090 pf c oss output capacitance 125 170 pf c rss reverse transfer capacitance 35 55 pf rg gate resistance v ds = 15mv, f = 1mhz 3.1 : switching characteristics t d(on) turn-on delay time v dd = 50v, i d = 4.4a v gs = 10v, r gen = 24 : 11 20 ns t r rise time 25 40 ns t d(off) turn-off delay time 35 56 ns t f fall time 26 42 ns q g total gate charge v gs = 10v v dd = 50v i d = 4.4a 13 17 nc q gs gate to source gate charge 3.6 nc q gd gate to drain ?miller? charge 3.4 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 4.4a 1.25 v v gs = 0v, i s = 2.2a 1.0 v t rr reverse recovery time i f = 4.4a, di/dt = 100a/ p s 56 ns q rr reverse recovery charge 108 nc notes: 1: r t ja is determined with the device mounted on a 1 in 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ja is determined by the user's board design. (a)r t ja = 60c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5?x1.5?x0.062? thick pcb. (b)r t ja = 135c/w when mounted on a minimum pad of 2 oz copper. 2: pulse test: pulse width < 300 p s, duty cycle < 2.0%. a. 60c/w when mounted on a 1 in 2 p a d o f 2 o z c o p p e r b. 135c/w when mounted on a minimum pad of 2 oz copper
fdm3622 n-channel powertrench ? mosfet fdm3622 rev.c2 www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 i d , drain current (a) v ds , drain to source voltage (v) pulse duration = 80 p s duty cycle = 0.5% max v gs = 4.5v t a = 25 o c v gs = 5v v gs = 10v v gs = 4.7v on-region characteristics figure 2. 0 0.5 1.0 1.5 2.0 2.5 -80 -40 0 40 80 120 160 normalized drain to source t j , junction temperature ( o c) on resistance v gs = 10v, i d = 4.4a pulse duration = 80 p s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs junction temperature f i g u r e 3 . o n - r e s i s t a n c e v s g a t e t o sou rce voltage 40 50 60 70 80 468 10 i d = 0.2a v gs , gate to source voltage (v) i d = 4.4a r ds(on) , drain to source on resistance (m : ) pulse duration = 80 p s duty cycle = 0.5% max figure 4. transfer characteristics 0 2 4 6 8 10 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i d , drain current (a) v gs , gate to source voltage (v) pulse duration = 80 p s duty cycle = 0.5% max v dd = 15v t j = 150 o c t j = 25 o c t j = -55 o c figure 5. 0 2 4 6 8 10 03691215 v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 50v i d = 4.4a i d = 1a waveforms in descending order: gate charge characteristics f i g u r e 6 . c a p a c i t a n c e v s d r a i n to source voltage 10 100 1000 0.1 1 10 100 1200 c, capacitance (pf) v gs = 0v, f = 1mhz c iss c gs + c gd c oss # c ds + c gd c rss c gd v ds , drain to source voltage (v)
fdm3622 n-channel powertrench ? mosfet fdm3622 rev.c2 www.fairchildsemi.com 4 figure 7. 0.1 1 10 100 0.01 0.1 1 10 100 400 dc 1s 100ms 10ms 1ms 100us single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c r d s(on) limited i d , drain current (a) v ds , drain to source voltage (v) f o r w a r d b i a s s a f e operating area figure 8. 1 10 0.001 0.01 0.1 1 10 100 20 i as , avalanche current (a) t av , time in avalanche (ms) starting t j = 25 o c starting t j = 150 o c t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] u n c a l a m p e d i n d u c t i v e switching capability f i g u r e 9 . n o r m a l i z e d p o w e r d i s s i p a t i o n vs amb ient temperature t a , ambient temperature ( o c) power dissipation multiplier 0 0255075100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 f i g u r e 1 0 . m a x i m u m c o n t i n u o u s d r a i n c u r r e n t vs ambient temperature 0 2 4 6 25 50 75 100 125 150 i d , drain current (a) t a , ambient temperature ( o c) v gs = 10v figure 11. 0.6 0.8 1.0 1.2 -80 -40 0 40 80 120 160 normalized gate t j , junction temperature ( o c) v gs = v ds , i d = 250 p a threshold voltage n o r m a l i z e d g a t e t h r e s h o l d v o l t a g e vs junction temperature f i g u r e 1 2 . n o r m a l i z e d d r a i n t o s o u r c e b r e a k d o w n voltag e vs junction temperature 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 t j , junction temperature ( o c) normalized drain to source i d = 250 p a breakdown voltage typical characteristics t j = 25c unless otherwise noted
fdm3622 n-channel powertrench ? mosfet fdm3622 rev.c2 www.fairchildsemi.com 5 figure 13. peak current capability 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 500 v gs = 10v single pulse r t ja = 135 o c/w p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - figure 14. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse r t ja = 135 o c/w p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a transient thermal response curve typical characteristics t j = 25c unless otherwise noted
fdm3622 n-channel powertrench ? mosfet fdm3622 rev.c2 www.fairchildsemi.com 6 dimensional outline and pad layout
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